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     DHG 10 I 1200PM advanced Sonic-FRD Symbol Definition R a t i n g s Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Conditions Unittyp. max. IFSM IR A μA V 70 IFAV A VF 2.69 RthJC 4.00 K/W VR = 1200 1 3 min. 10 =10ms (50 Hz), sine Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) VRRM V 1200 15 TVJ = V 25 °C TVJ = 125 °C mA 1.5 Package: Part number VR = 1200 TVJ = 25 °C IF =A10 V TC =30°C Ptot 31 W TC 25 °C = A IRM 8.5 -diF/dt = 350 A/μs IF =A;10 VR =V800 A t rr EAS tbd mJ =A;L = μHtbd 100 TVJ = 25 °C IAS IAR A VA = 1.5·VR typ.; tbd f = 10 kHz TVJ 150 °C -55 High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode VRRM = 1200 V IFAV trr = = 10 A 75 ns TVJ =45°C DHG 10 I 1200PM V tp max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time 3.56 TVJ = 25 °C CJ tbd pF junction capacitance VR =V;600 f = 1 MHz TVJ =°C25 VF0 V 1.60 TVJ = 150 °C rF 73.6 mΩ TO-220FPAC V 2.38 10 125TVJ =°C IF =A V 3.33 IF =A20 IF =A20 ns 75 ns ● Industry standard outline ● Plastic overmolded tab for electrical isolation ● Epoxy meets UL 94V-0 ● RoHS compliant TVJ =25 °C TVJ = 125 °C TVJ =25 °C TVJ = 125 °C rectangular, d = 0.5 threshold voltage slope resistance for power loss calculation only Backside: isolated IXYS reserves the right to change limits, conditions and dimensions. ? 2006 IXYS all rights reserved 0629 * Data according to IEC 60747and per diode unless otherwise specified |